Role of gate current and polarization switching in sub-60 mV/decade steep subthreshold slope in metal–ferroelectric HfZrO^sub 2^–metal–insulator–Si FET

We experimentally observed a sub-60 mV/decade steep subthreshold slope (SS) in metal–ferroelectric HfZrO2 (FE:HZO)–metal–insulator–Si (MFMIS)-FET. We investigated its physical mechanism by monitoring gate leakage current, which enabled us to trace polarization switching. We fabricated MFMIS-FET by i...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2018-11, Vol.57 (11), p.114202
Main Authors: Jang, Kyungmin, Kobayashi, Masaharu, Hiramoto, Toshiro
Format: Article
Language:English
Subjects:
Charge injection
Current leakage
Ferroelectric materials
Ferroelectricity
Gates
Leakage current
Polarization
Switching
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Summary:We experimentally observed a sub-60 mV/decade steep subthreshold slope (SS) in metal–ferroelectric HfZrO2 (FE:HZO)–metal–insulator–Si (MFMIS)-FET. We investigated its physical mechanism by monitoring gate leakage current, which enabled us to trace polarization switching. We fabricated MFMIS-FET by integrating an FE:HZO capacitor on a conventional MISFET. In our MFMIS-FET fabricated on MISFET with a leaky gate insulator, sub-60 mV/decade SS was observed along 2 decades of drain current, and the minimum SS was 21 mV/decade. The observed steep SS can be explained with a novel physical model by combining the charge injection to the internal gate and the polarization switching in FE:HZO. The characterization and analysis in this work will help provide insights into the physical mechanism of the steep SS phenomenon observed in MFMIS-FET.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.114202