Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum Oxides

In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of \text{I}_{ \mathrm{\scriptscriptstyle ON}} enhancement and 27% \text{V}_{T} reduction under the...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-02, Vol.66 (2), p.1082-1086
Main Authors: Cheng, Chun-Hu, Fan, Chia-Chi, Liu, Chien, Hsu, Hsiao-Hsuan, Chen, Hsuan-Han, Hsu, Chih-Chieh, Wang, Shih-An, Chang, Chun-Yen
Format: Article
Language:English
Subjects:
Aluminum oxide
Capacitance
Capacitors
Crystallization
Electrical measurement
Ferroelectric materials
Ferroelectricity
Ferroelectrics
Field effect transistors
gate stress (GS)
Hysteresis
Logic gates
negative capacitance (NC)
Nitrogen
Orthorhombic phase
Phase transitions
Semiconductor devices
Stress
Transistors
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Summary:In this paper, we reported a ferroelectric HfAlO x negative capacitor transistor with gate-stress (GS) engineering. Compared to control device, the HfAlO x transistor with GS engineering percentage of \text{I}_{ \mathrm{\scriptscriptstyle ON}} enhancement and 27% \text{V}_{T} reduction under the assistance of the negative capacitance (NC) effect. The orthorhombic phase transition played a crucial role in realizing the NC effect. From the results of the material analysis, the theoretical Landau simulation and electrical measurement, we demonstrated that the GS is favorable for inducing orthorhombic phase crystallization of HfAlO x and stabilizing the NC effect, which shows the potential for the application of advanced technology node.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2018.2888836