Electric field modified Arrhenius description of charge transport in amorphous oxide semiconductor thin film transistors

While it is known that the charge-carrier mobility in amorphous metal oxide semiconductor thin film transistors (TFT) deviates from Arrhenius temperature dependence, we found that the Hall mobility measured in amorphous In-Ga-Zn-O (a-IGZO) follows an Arrhenius relation surprisingly well. We explain...

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Bibliographic Details
Published in:Physical review. B 2018-12, Vol.98 (24), p.1, Article 245308
Main Authors: Wang, Wei, Xu, Guangwei, Chowdhury, M. Delwar H., Wang, Hong, Um, Jae Kwang, Ji, Zhuoyu, Gao, Nan, Zong, Zhiwei, Bi, Chong, Lu, Congyan, Lu, Nianduan, Banerjee, Writam, Feng, Jiafeng, Li, Ling, Kadashchuk, Andrey, Jang, Jin, Liu, Ming
Format: Article
Language:English
Subjects:
Carrier mobility
Charge transport
Current carriers
Electric fields
Electron mobility
Hall effect
Indium gallium zinc oxide
Metal oxide semiconductors
Semiconductor devices
Temperature
Temperature dependence
Thin film transistors
Thin films
Transistors
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Summary:While it is known that the charge-carrier mobility in amorphous metal oxide semiconductor thin film transistors (TFT) deviates from Arrhenius temperature dependence, we found that the Hall mobility measured in amorphous In-Ga-Zn-O (a-IGZO) follows an Arrhenius relation surprisingly well. We explain these observations by the effect of strong vertical electric field created by the gate voltage, which facilitates direct tunneling of trapped carriers into the conductive band and leads to virtually temperature independent mobility. We present a generalized Arrhenius model based on the effective temperature concept. We show that our model allows quantitative description of the temperature dependence of the mobility in a-IGZO TFTs over a broad temperature range.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.98.245308