Raman scattering study on phonon anisotropic properties of SiC

• Published in: Journal of alloys and compounds 2019-03, Vol.776, p.1048-1055
• Main Authors: Qin, Xiao, Li, Xiaomeng, Chen, Xiufang, Yang, Xianglong, Zhang, Fusheng, Xu, Xiangang, Hu, Xiaobo, Peng, Yan, Yu, Peng
• Format: Article
• Language: English
• Subjects: Anisotropic; Anisotropy; Luminous intensity; Phonon; Properties (attributes); Raman selection rules; Raman spectra; Semiconductors; SiC; Silicon carbide; Stacking faults; Wurtzite
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2018.10.324

Phonon anisotropic properties of 4H, 6H and 15R-SiC were investigated by polarization Raman scattering, and Raman selection rules were explored both theoretically and experimentally. As a function of the relative angles between the incident and the scattered light, Raman intensity of E1, E2 and A1 modes were collected from the (0001) plane, the (11¯00) plane, and the (112¯0) plane of wurtzite SiC and the 15R-SiC region in the (0001) plane. Results showed that E1, E2 and A1 modes were anisotropic in the (112¯0) and the (11¯00) planes of 4H and 6H-SiC, while E2 modes were isotropous in the (0001) plane. Furthermore, E1 mode of 799 cm−1 in the (0001) plane appeared and exhibited anisotropic properties due to the stacking faults in SiC. Otherwise, the anisotropic properties of A1 and E modes of 15R-SiC in the (0001) plane were in agreement with that of wurtzite SiC. •The phonon anisotropy of SiC with different polar planes was measured by Raman.•The anisotropy of different SiC polar planes was calculated by group theory.•The E1 mode (799 cm−1) caused by the stacking faults in SiC was anisotropic.•The phonon modes in 4H and 6H SiC were found to have similar anisotropy.