Effects of Channel Implant Variation on Radiation-Induced Edge Leakage Currents in n-Channel MOSFETs

The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are modeled using a process simulator in combination with analytical computations. The model integrates doping profiles obtained from process simulati...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2017-08, Vol.64 (8), p.2235-2241
Main Authors: McLain, Michael L., Barnaby, Hugh J., Schlenvogt, Garrett
Format: Article
Language:English
Subjects:
Bulk CMOS
CMOS
Computational modeling
Computer simulation
Doping
Doping profiles
Implants
Leakage
Leakage currents
Mathematical model
Mathematical models
MOSFETs
process variation
Radiation
Radiation effects
radiation-induced defects
radiation-induced edge leakage currents
Semiconductor process modeling
total ionizing dose (TID)
Transplants & implants
Variation
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Description
Summary:The effects of radiation-induced defects and statistical variation in the dose and energy of MOSFET channel implants in a modern bulk CMOS technology are modeled using a process simulator in combination with analytical computations. The model integrates doping profiles obtained from process simulations and experimentally determined defect potentials into implicit surface potential equations. Solutions to these equations are used to model radiation-induced edge leakage currents in 90-nm bulk CMOS n-channel MOSFETs. The results indicate that slight variations in the channel implant parameters can have a significant impact on the doping profile along the shallow trench isolation sidewall and thus the radiation-induced edge leakage currents.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2017.2705118