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Corrigendum: "Evaluation of the increase in threading dislocation during the initial stage of physical vapor transport growth of 4H-SiC" [Jpn. J. Appl. Phys. 57, 065501 (2018)]

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-01, Vol.58 (1), p.19301
Main Authors: Suo, Hiromasa, Tsukimoto, Susumu, Eto, Kazuma, Osawa, Hiroshi, Kato, Tomohisa, Okumura, Hajime
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/aae92e