Ultrawide‐Bandgap Amorphous MgGaO: Nonequilibrium Growth and Vacuum Ultraviolet Application

New ultrawide‐bandgap (>6.0 eV) photosensitive materials are in urgent need to meet the requirements of vacuum‐ultraviolet (VUV) photodetection applied in deep space exploration. Here, a nonequilibrium growth method is reported to fabricate amorphous MgGaO (a‐MgGaO) films with an ultrawide bandga...

Full description

Saved in:
Bibliographic Details
Published in:Advanced optical materials 2019-02, Vol.7 (3), p.n/a
Main Authors: Dong, Mei, Zheng, Wei, Xu, Cunhua, Lin, Richeng, Zhang, Dan, Zhang, Zhaojun, Huang, Feng
Format: Article
Language:English
Subjects:
band engineering
Conductors
Deep space
Energy gap
Gallium oxides
Graphene
Materials science
MgGaO
nonequilibrium growth
Optics
Photosensitivity
Recovery time
Selectivity
Space exploration
Ultraviolet detectors
vacuum‐ultraviolet photodetection
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:New ultrawide‐bandgap (>6.0 eV) photosensitive materials are in urgent need to meet the requirements of vacuum‐ultraviolet (VUV) photodetection applied in deep space exploration. Here, a nonequilibrium growth method is reported to fabricate amorphous MgGaO (a‐MgGaO) films with an ultrawide bandgap of 6.0 eV and an ultrashort absorption edge of 206 nm by alloying MgO and Ga2O3. By combining the as‐grown films with p‐type graphene (p‐Gr) which serves as a transparent conductor, a vacuum‐ultraviolet photovoltaic detector of p‐Gr/a‐MgGaO/n‐SiC (n‐type SiC) is constructed. The device exhibits an excellent VUV spectral selectivity with a VUV (185 nm)/UV (250 nm) rejection ratio exceeding 103, high photoresponsivity (≈10.3 mA W−1) under 0 V bias, and ultrafast response and recovery time of 1.94 µs and 0.6 ms, respectively. The reported nonequilibrium growth method is expected to have tremendous potential in fabricating ultrawide‐bandgap oxide compounds, and finally facilitate future deep space exploration. A vacuum ultraviolet detector based on amorphous MgGaO (a‐MgGaO) film is reported. The amorphous film with ultra‐wide band gap prepared by non‐equilibrium growth method is used to fabricate a p‐graphene/a‐MgGaO/n‐SiC photovoltaic detector which exhibits good VUV spectral selectivity, high photoresponsivity and ultra‐fast response speed. It is believed that the amorphous film has potential applications in vacuum ultraviolet detection.
ISSN:2195-1071
2195-1071
DOI:10.1002/adom.201801272