Study of degradation in InGaP/InGaAs/Ge multi-junction solar cell characteristics due to irradiation-induced deep level traps using finite element analysis

•The detailed optimized structure of InGaP/InGaAs/Ge 3J solar cell is presented.•A simulation model showing diffusion length variation is proposed for InGaP & InGaAs.•The experimental J-V of 3J solar cell has been compared with the simulated result.•Current matching between top and middle cell i...

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Bibliographic Details
Published in:Solar energy 2019-01, Vol.178, p.215-221
Main Authors: Kotamraju, Siva, Sukeerthi, M., Puthanveettil, Suresh E., Sankaran, M.
Format: Article
Language:English
Subjects:
Computer simulation
Degradation
Device modeling
Energy conversion efficiency
Finite element method
Gallium indium phosphide
III-V multi-junction solar cell
Irradiation
Mathematical models
Minority electron lifetime
Photovoltaic cells
Radiation
Recombination
Solar cells
Solar energy
Trap level
Traps
Two dimensional models
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Summary:•The detailed optimized structure of InGaP/InGaAs/Ge 3J solar cell is presented.•A simulation model showing diffusion length variation is proposed for InGaP & InGaAs.•The experimental J-V of 3J solar cell has been compared with the simulated result.•Current matching between top and middle cell is presented considering deep level traps.•A peak η of 30% has been obtained in the presence of traps and interface recombination. We investigated the influence of irradiation-induced deep level traps on the performance of 3J solar cell using two-dimensional numerical simulations. Modeling of solar cell degradation has been performed by systematically considering the trap levels in the top InGaP and middle InGaAs subcells. At the trap concentration of 1 × 1016 cm−3, simulation results show a conversion efficiency of 26% for AM0 spectrum (1-sun). The results obtained demonstrate that the trap level in p-base InGaAs causes more degradation compared to p-base InGaP region. The combination of 1 × 1016 cm−3 trap concentration and 1 × 104 cm s−1 surface recombination velocity is the point beyond which significant reduction in solar cell output parameters was observed. For the same trap concentration and interface recombination values, 30% conversion efficiency was achieved at concentrated sunlight with current matching among the top and middle cells.
ISSN:0038-092X
1471-1257
DOI:10.1016/j.solener.2018.12.036