Influence of Molecular Beam Epitaxy (MBE) Parameters on Catalyst-Free Growth of InAs Nanowires on Silicon (111) Substrate

The effect of molecular beam epitaxy parameters on catalyst-free growth of InAs nanowires using oxide templates on Si (111) substrate has been studied. Two different approaches, i.e., thermal and plasma-enhanced chemical vapor deposition, were used to prepare the oxide templates. The length, diamete...

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Bibliographic Details
Published in:Journal of electronic materials 2019-04, Vol.48 (4), p.2174-2182
Main Authors: Jangir, Suresh K., Malik, Hitendra K., Kumar, Anand, Sridhar Rao, D. V., Muralidharan, R., Mishra, Puspashree
Format: Article
Language:English
Subjects:
Catalysis
Catalysts
Characterization and Evaluation of Materials
Chemistry and Materials Science
Density
Electronics and Microelectronics
Emission analysis
Epitaxial growth
Instrumentation
Materials Science
Microscopy
Molecular beam epitaxy
Nanowires
Optical and Electronic Materials
Optical properties
Organic chemistry
Parameters
Plasma enhanced chemical vapor deposition
Pressure ratio
Raman spectroscopy
Scanning electron microscopy
Silicon substrates
Solid State Physics
Transmission electron microscopy
X-ray diffraction
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Summary:The effect of molecular beam epitaxy parameters on catalyst-free growth of InAs nanowires using oxide templates on Si (111) substrate has been studied. Two different approaches, i.e., thermal and plasma-enhanced chemical vapor deposition, were used to prepare the oxide templates. The length, diameter, density, and quality of the nanowires depended strongly on the substrate temperature, As/In beam equivalent pressure ratio, and growth rate, whereas the type, thickness, and uniformity of the oxide were found to affect only the density of the nanowires. Nanowires could be grown effectively in only a very narrow range of these growth parameters. The surface morphological, structural, and optical properties of the nanowires were assessed using various techniques including field-emission scanning electron microscopy, high-resolution x-ray diffraction analysis, transmission electron microscopy, and Raman spectroscopy.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-019-07037-5