Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition

•300-nm-thick AlInN films were grown on GaN on sapphire by MOCVD.•AlInN surfaces drastically varied around a lattice-matching composition.•Optical constants and energy bandgaps were determined for flat-surface AlInN films. 300-nm-thick AlInN films with InN molar fractions ranging from 0.114 to 0.197...

Full description

Saved in:
Bibliographic Details
Published in:Journal of crystal growth 2019-01, Vol.506, p.40-44
Main Authors: Miyoshi, Makoto, Yamanaka, Mizuki, Egawa, Takashi, Takeuchi, Tetsuya
Format: Article
Language:English
Subjects:
A1. Crystal morphology
A3. Metalorganic vapor phase epitaxy
B1. Nitrides
B2. Semiconducting III-V materials
B2. Semiconducting ternary compounds
Chemical vapor deposition
Columnar structure
Lattice matching
Metalorganic chemical vapor deposition
Morphology
Organic chemistry
Sapphire
Thick films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c450t-46065acf394edad885c05c15b9850fb875c4d9db2bfe309479c578eefe880a393
cites cdi_FETCH-LOGICAL-c450t-46065acf394edad885c05c15b9850fb875c4d9db2bfe309479c578eefe880a393
container_end_page 44
container_issue
container_start_page 40
container_title Journal of crystal growth
container_volume 506
creator Miyoshi, Makoto
Yamanaka, Mizuki
Egawa, Takashi
Takeuchi, Tetsuya
description •300-nm-thick AlInN films were grown on GaN on sapphire by MOCVD.•AlInN surfaces drastically varied around a lattice-matching composition.•Optical constants and energy bandgaps were determined for flat-surface AlInN films. 300-nm-thick AlInN films with InN molar fractions ranging from 0.114 to 0.197 were grown by metalorganic chemical vapor deposition on c-plane GaN on sapphire. It was confirmed that no lattice relaxation occurred for samples with InN molar fractions from 0.144 to 0.197, and the InAlN films with low InN molar fractions showed a relative smooth surface. However, it turned into a granular surface morphology resulting from a columnar polycrystalline structure when the InN molar fraction exceeded a compositional boundary of in-plane lattice matching. As for the smooth-surface AlInN single-layers, the optical constants as well as energy bandgaps were determined.
doi_str_mv 10.1016/j.jcrysgro.2018.09.049
format article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2181751019</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S002202481830486X</els_id><sourcerecordid>2181751019</sourcerecordid><originalsourceid>FETCH-LOGICAL-c450t-46065acf394edad885c05c15b9850fb875c4d9db2bfe309479c578eefe880a393</originalsourceid><addsrcrecordid>eNqFkEFv2zAMhYViA5p1_QuFgJ3tUrYVS7cVxZoF6LLLdhZkmm7kOpYnOd3y7ysj7XkXEgT53gM_xm4E5ALE-rbPewyn-BR8XoBQOegcKn3BVkLVZSYBig9slWqRQVGpS_Ypxh4gKQWs2L8fDoOPczjifAzEX2xwdnZ-5G7k897hM78btuOOd244RJ5C_o48bTGbBjsS39jdMkY7TXuX9M2JH2i2gw9PdnTIcU8Hh3ZIxpMPvKXJR7f4f2YfOztEun7rV-z3w7df99-zx5-b7f3dY4aVhDmr1rCWFrtSV9TaVimJIFHIRisJXaNqiVWr26ZoOipBV7VGWSuijpQCW-ryin05-07B_zlSnE3vj2FMkaYQStQyMVyu1uerBUYM1JkpuIMNJyPALJRNb94pm4WyAW0S5ST8ehZS-uHFUTARHY1IbaKBs2m9-5_FK3h9i7w</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2181751019</pqid></control><display><type>article</type><title>Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition</title><source>ScienceDirect Journals</source><creator>Miyoshi, Makoto ; Yamanaka, Mizuki ; Egawa, Takashi ; Takeuchi, Tetsuya</creator><creatorcontrib>Miyoshi, Makoto ; Yamanaka, Mizuki ; Egawa, Takashi ; Takeuchi, Tetsuya</creatorcontrib><description>•300-nm-thick AlInN films were grown on GaN on sapphire by MOCVD.•AlInN surfaces drastically varied around a lattice-matching composition.•Optical constants and energy bandgaps were determined for flat-surface AlInN films. 300-nm-thick AlInN films with InN molar fractions ranging from 0.114 to 0.197 were grown by metalorganic chemical vapor deposition on c-plane GaN on sapphire. It was confirmed that no lattice relaxation occurred for samples with InN molar fractions from 0.144 to 0.197, and the InAlN films with low InN molar fractions showed a relative smooth surface. However, it turned into a granular surface morphology resulting from a columnar polycrystalline structure when the InN molar fraction exceeded a compositional boundary of in-plane lattice matching. As for the smooth-surface AlInN single-layers, the optical constants as well as energy bandgaps were determined.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2018.09.049</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Crystal morphology ; A3. Metalorganic vapor phase epitaxy ; B1. Nitrides ; B2. Semiconducting III-V materials ; B2. Semiconducting ternary compounds ; Chemical vapor deposition ; Columnar structure ; Lattice matching ; Metalorganic chemical vapor deposition ; Morphology ; Organic chemistry ; Sapphire ; Thick films</subject><ispartof>Journal of crystal growth, 2019-01, Vol.506, p.40-44</ispartof><rights>2018 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jan 15, 2019</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c450t-46065acf394edad885c05c15b9850fb875c4d9db2bfe309479c578eefe880a393</citedby><cites>FETCH-LOGICAL-c450t-46065acf394edad885c05c15b9850fb875c4d9db2bfe309479c578eefe880a393</cites><orcidid>0000-0001-9583-1891</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Miyoshi, Makoto</creatorcontrib><creatorcontrib>Yamanaka, Mizuki</creatorcontrib><creatorcontrib>Egawa, Takashi</creatorcontrib><creatorcontrib>Takeuchi, Tetsuya</creatorcontrib><title>Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition</title><title>Journal of crystal growth</title><description>•300-nm-thick AlInN films were grown on GaN on sapphire by MOCVD.•AlInN surfaces drastically varied around a lattice-matching composition.•Optical constants and energy bandgaps were determined for flat-surface AlInN films. 300-nm-thick AlInN films with InN molar fractions ranging from 0.114 to 0.197 were grown by metalorganic chemical vapor deposition on c-plane GaN on sapphire. It was confirmed that no lattice relaxation occurred for samples with InN molar fractions from 0.144 to 0.197, and the InAlN films with low InN molar fractions showed a relative smooth surface. However, it turned into a granular surface morphology resulting from a columnar polycrystalline structure when the InN molar fraction exceeded a compositional boundary of in-plane lattice matching. As for the smooth-surface AlInN single-layers, the optical constants as well as energy bandgaps were determined.</description><subject>A1. Crystal morphology</subject><subject>A3. Metalorganic vapor phase epitaxy</subject><subject>B1. Nitrides</subject><subject>B2. Semiconducting III-V materials</subject><subject>B2. Semiconducting ternary compounds</subject><subject>Chemical vapor deposition</subject><subject>Columnar structure</subject><subject>Lattice matching</subject><subject>Metalorganic chemical vapor deposition</subject><subject>Morphology</subject><subject>Organic chemistry</subject><subject>Sapphire</subject><subject>Thick films</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNqFkEFv2zAMhYViA5p1_QuFgJ3tUrYVS7cVxZoF6LLLdhZkmm7kOpYnOd3y7ysj7XkXEgT53gM_xm4E5ALE-rbPewyn-BR8XoBQOegcKn3BVkLVZSYBig9slWqRQVGpS_Ypxh4gKQWs2L8fDoOPczjifAzEX2xwdnZ-5G7k897hM78btuOOd244RJ5C_o48bTGbBjsS39jdMkY7TXuX9M2JH2i2gw9PdnTIcU8Hh3ZIxpMPvKXJR7f4f2YfOztEun7rV-z3w7df99-zx5-b7f3dY4aVhDmr1rCWFrtSV9TaVimJIFHIRisJXaNqiVWr26ZoOipBV7VGWSuijpQCW-ryin05-07B_zlSnE3vj2FMkaYQStQyMVyu1uerBUYM1JkpuIMNJyPALJRNb94pm4WyAW0S5ST8ehZS-uHFUTARHY1IbaKBs2m9-5_FK3h9i7w</recordid><startdate>20190115</startdate><enddate>20190115</enddate><creator>Miyoshi, Makoto</creator><creator>Yamanaka, Mizuki</creator><creator>Egawa, Takashi</creator><creator>Takeuchi, Tetsuya</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-9583-1891</orcidid></search><sort><creationdate>20190115</creationdate><title>Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition</title><author>Miyoshi, Makoto ; Yamanaka, Mizuki ; Egawa, Takashi ; Takeuchi, Tetsuya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c450t-46065acf394edad885c05c15b9850fb875c4d9db2bfe309479c578eefe880a393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>A1. Crystal morphology</topic><topic>A3. Metalorganic vapor phase epitaxy</topic><topic>B1. Nitrides</topic><topic>B2. Semiconducting III-V materials</topic><topic>B2. Semiconducting ternary compounds</topic><topic>Chemical vapor deposition</topic><topic>Columnar structure</topic><topic>Lattice matching</topic><topic>Metalorganic chemical vapor deposition</topic><topic>Morphology</topic><topic>Organic chemistry</topic><topic>Sapphire</topic><topic>Thick films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Miyoshi, Makoto</creatorcontrib><creatorcontrib>Yamanaka, Mizuki</creatorcontrib><creatorcontrib>Egawa, Takashi</creatorcontrib><creatorcontrib>Takeuchi, Tetsuya</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Miyoshi, Makoto</au><au>Yamanaka, Mizuki</au><au>Egawa, Takashi</au><au>Takeuchi, Tetsuya</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition</atitle><jtitle>Journal of crystal growth</jtitle><date>2019-01-15</date><risdate>2019</risdate><volume>506</volume><spage>40</spage><epage>44</epage><pages>40-44</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><abstract>•300-nm-thick AlInN films were grown on GaN on sapphire by MOCVD.•AlInN surfaces drastically varied around a lattice-matching composition.•Optical constants and energy bandgaps were determined for flat-surface AlInN films. 300-nm-thick AlInN films with InN molar fractions ranging from 0.114 to 0.197 were grown by metalorganic chemical vapor deposition on c-plane GaN on sapphire. It was confirmed that no lattice relaxation occurred for samples with InN molar fractions from 0.144 to 0.197, and the InAlN films with low InN molar fractions showed a relative smooth surface. However, it turned into a granular surface morphology resulting from a columnar polycrystalline structure when the InN molar fraction exceeded a compositional boundary of in-plane lattice matching. As for the smooth-surface AlInN single-layers, the optical constants as well as energy bandgaps were determined.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2018.09.049</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-9583-1891</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 0022-0248
ispartof Journal of crystal growth, 2019-01, Vol.506, p.40-44
issn 0022-0248
1873-5002
language eng
recordid cdi_proquest_journals_2181751019
source ScienceDirect Journals
subjects A1. Crystal morphology
A3. Metalorganic vapor phase epitaxy
B1. Nitrides
B2. Semiconducting III-V materials
B2. Semiconducting ternary compounds
Chemical vapor deposition
Columnar structure
Lattice matching
Metalorganic chemical vapor deposition
Morphology
Organic chemistry
Sapphire
Thick films
title Microstructure variation in thick AlInN films grown on c-plane GaN on sapphire by metalorganic chemical vapor deposition
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T20%3A17%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Microstructure%20variation%20in%20thick%20AlInN%20films%20grown%20on%20c-plane%20GaN%20on%20sapphire%20by%20metalorganic%20chemical%20vapor%20deposition&rft.jtitle=Journal%20of%20crystal%20growth&rft.au=Miyoshi,%20Makoto&rft.date=2019-01-15&rft.volume=506&rft.spage=40&rft.epage=44&rft.pages=40-44&rft.issn=0022-0248&rft.eissn=1873-5002&rft_id=info:doi/10.1016/j.jcrysgro.2018.09.049&rft_dat=%3Cproquest_cross%3E2181751019%3C/proquest_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c450t-46065acf394edad885c05c15b9850fb875c4d9db2bfe309479c578eefe880a393%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2181751019&rft_id=info:pmid/&rfr_iscdi=true