Polycrystalline diamond films with tailored micro/nanostructure/doping for new large area film-based diamond electronics

This paper describes processes developed to change two key electrical properties (electrical resistivity and carrier type) of ultrananocrystalline diamond (UNCD) to microcrystalline diamond (MCD) films. The results show that the electrical properties of the investigated polycrystalline diamond films...

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Bibliographic Details
Published in:Diamond and related materials 2019-01, Vol.91, p.261-271
Main Authors: Alcantar-Peña, Jesus J., de Obaldia, Elida, Tirado, Pablo, Arellano-Jimenez, Maria J., Ortega Aguilar, Jose E., Veyan, Jean F., Yacaman, Miguel J., Koudriavtsev, Yuriy, Auciello, Orlando
Format: Article
Language:English
Subjects:
Diamond films
Electrical properties
Electrical resistivity
Electronic devices
Electronics
Fluorine
Grain boundaries
Grain size
Manufacturing
Organic chemistry
Polycrystalline diamond
Polycrystals
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Summary:This paper describes processes developed to change two key electrical properties (electrical resistivity and carrier type) of ultrananocrystalline diamond (UNCD) to microcrystalline diamond (MCD) films. The results show that the electrical properties of the investigated polycrystalline diamond films depend on the grain size and plasma treated grain boundary networks interfaces and external films' surfaces, in which hydrogen, fluorine or nitrogen can be incorporated to tailor electrical carriers-type to tune the electrical properties. Exploring the feasibility of modulating the resistivity of polycrystalline diamond films via tailoring of grain size, surface chemistry and nitrogen or fluorine incorporation into films' grain boundaries and external surfaces may enable applications of these diamond films as active or heat dissipation layers on micro/nano-electronic devices. This work can open the pathway to enabling an industrial process for new diamond-based electronics, since polycrystalline diamond films can be grown with extreme uniformity on 300 mm diameter Si wafers, used in manufacturing of current Si-based micro/nano-electronic devices. [Display omitted] •Tailored synthesis of polycrystalline diamond films with controlled gain sizes on large area Si substrates.•Dopants in grain boundaries/surface, control carriers-type and electrical conductivity of polydiamond film electronics.•Polydiamond films with good electronic properties on 300 mm substrates enable low cost diamond film-based electronics.
ISSN:0925-9635
1879-0062
DOI:10.1016/j.diamond.2018.11.028