B-doping and annealing on the properties of B and Ga co-doped ZnO films

Transparent conducting boron (B) and gallium (Ga) co-doped ZnO (BGZO) films were deposited by radio frequency (RF) magnetron sputtering. The influence of B-doping and annealing treatment on properties of BGZO films was investigated. The results indicate that all samples have hexagonal wurtzite struc...

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Bibliographic Details
Published in:Surface & coatings technology 2019-01, Vol.358, p.223-227
Main Authors: Huang, Jian, Hu, Yan, Ma, Yuncheng, Li, Bing, Tang, Ke, Shi, Haozhi, Gou, Saifei, Zou, Tianyu, Wang, Linjun, Lu, Yicheng
Format: Article
Language:English
Subjects:
Annealing
Boron
Carrier density
Doping
Doppler effect
Electrical properties
Electron mobility
Gallium
Hall effect
Magnetic properties
Magnetron sputtering
Radio frequency
Red shift
Thermal stability
Wurtzite
Zinc oxide
ZnO
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Summary:Transparent conducting boron (B) and gallium (Ga) co-doped ZnO (BGZO) films were deposited by radio frequency (RF) magnetron sputtering. The influence of B-doping and annealing treatment on properties of BGZO films was investigated. The results indicate that all samples have hexagonal wurtzite structure with (002) preferential orientation and the film crystallinity is improved with increasing annealing temperature. The hall mobility of films increases and the carrier concentration decreases with the increasing of annealing temperature. The films also show red shift of the optical bandgap with the increasing of annealing temperature. The incorporation of B increases the thermal stability of electrical properties of the BGZO film. •The crystalline quality is improved with the increase of annealing temperature.•The ratio of O/Zn in BGZO films increases with increasing annealing temperature.•The incorporation of B increases the thermal stability of the BGZO film.•The decrease of carrier concentration causes reduced Eg at high annealing temperature.
ISSN:0257-8972
1879-3347
DOI:10.1016/j.surfcoat.2018.11.053