Introduction to new memory paradigms: memristive phenomena and neuromorphic applications

This article provides a brief introduction to the Faraday Discussion "New memory paradigms: memristive phenomena and neuromorphic applications" held in Aachen, Germany, 15-17 October 2018. It will cover basic definitions of memristive switching elements, their main switching modes, and the...

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Bibliographic Details
Published in:Faraday discussions 2019-02, Vol.213, p.11-27
Main Authors: Waser, Rainer, Dittmann, Regina, Menzel, Stephan, Noll, Tobias
Format: Article
Language:English
Subjects:
Algorithms
Electric Capacitance
Electronics - instrumentation
Equipment Design
Information Storage and Retrieval
Information technology
Metals - chemistry
Nanoelectronics
Nanotechnology
Nanotechnology - instrumentation
Nanotechnology devices
Neural Networks, Computer
Static Electricity
Switching
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Summary:This article provides a brief introduction to the Faraday Discussion "New memory paradigms: memristive phenomena and neuromorphic applications" held in Aachen, Germany, 15-17 October 2018. It will cover basic definitions of memristive switching elements, their main switching modes, and their most important performance parameters as well as applications in neuromorphic computing. The article comprises parts from the following sources: General Introduction and Introduction to Part V of Nanoelectronics and Information Technology , ed. R. Waser, Wiley-VCH, 2012; Chapter 4 of Nanotechnology: Volume 3: Information Technology I , ed. R. Waser, Wiley-VCH, Weinheim, 2008; Chapters 3-9 of Emerging Nanoelectronic Devices , ed. A. Chen, J. Hutchby, V. Zhirnov and G. Bourianoff, Wiley, 2015; Chapter 1 of Resistive Switching , ed. D. Ielmini and R. Waser, Wiley-VCH, 2016 (with permission by Wiley-VCH). This article provides a brief introduction to the Faraday Discussion "New memory paradigms: memristive phenomena and neuromorphic applications" held in Aachen, Germany, 15-17 October 2018.
ISSN:1359-6640
1364-5498
DOI:10.1039/c8fd90058b