Integrated \(^{9}\)Be\(^{+}\) multi-qubit gate device for the ion-trap quantum computer

We demonstrate the experimental realization of a two-qubit Mølmer-Sørensen gate on a magnetic field-insensitive hyperfine transition in \(^9\)Be\(^+\) ions using microwave-near fields emitted by a single microwave conductor embedded in a surface-electrode ion trap. The design of the conductor was op...

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Bibliographic Details
Published in:arXiv.org 2019-09
Main Authors: Hahn, Henning, Zarantonello, Giorgio, Schulte, Marius, Bautista-Salvador, Amado, Hammerer, Klemens, Ospelkaus, Christian
Format: Article
Language:English
Subjects:
Conductors
Design optimization
Error analysis
Magnetic fields
Near fields
Position measurement
Quantum computers
Quantum theory
Qubits (quantum computing)
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Summary:We demonstrate the experimental realization of a two-qubit Mølmer-Sørensen gate on a magnetic field-insensitive hyperfine transition in \(^9\)Be\(^+\) ions using microwave-near fields emitted by a single microwave conductor embedded in a surface-electrode ion trap. The design of the conductor was optimized to produce a high oscillating magnetic field gradient at the ion position. The measured gate fidelity is determined to be \(98.2\pm1.2\,\%\) and is limited by technical imperfections, as is confirmed by a comprehensive numerical error analysis. The conductor design can potentially simplify the implementation of multi-qubit gates and represents a self-contained, scalable module for entangling gates within the quantum CCD architecture for an ion-trap quantum computer.
ISSN:2331-8422
DOI:10.48550/arxiv.1902.07028