Peculiarities of electron transport in SiO x films obtained by ion-plasma sputtering

The electrical conductivity of SiOx and nanocomposite SiO2(Si) films obtained by ion-plasma sputtering with subsequent high-temperature annealing has been investigated. On the basis of the detailed analysis of the current characteristics some electric parameters have been calculated and mechanisms o...

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Bibliographic Details
Published in:Applied nanoscience 2019-02, p.1-7
Main Authors: Bratus, O L, Evtukh, A A, Ilchenko, V V
Format: Article
Language:English
Subjects:
Annealing
Chemical vapor deposition
Current voltage characteristics
Electrical resistivity
Electron transport
High temperature
Hopping conduction
Ion plasma sputtering
Nanocomposites
Nanocrystals
Plasma
Silicon
Silicon dioxide
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Summary:The electrical conductivity of SiOx and nanocomposite SiO2(Si) films obtained by ion-plasma sputtering with subsequent high-temperature annealing has been investigated. On the basis of the detailed analysis of the current characteristics some electric parameters have been calculated and mechanisms of the electrical conductivity of the SiOx and SiO2(Si) films have been determined. The electrical conductivity of the films is based on the mechanism of hopping conductivity with variable-range hopping through the traps near the Fermi level (Mott’s mechanism). The minimum of current in current–voltage characteristics has been revealed in the temperature range 78–225 K. The qualitative model for explanation of the features of electron transport in SiOx and SiO2(Si) films has been proposed.
ISSN:2190-5509
2190-5517
DOI:10.1007/s13204-019-00988-5