Room-temperature nonvolatile four-state memory based on multiferroic Sr3Co2Fe21.6O37.4

• Published in: Journal of alloys and compounds 2019-03, Vol.779, p.115-120
• Main Authors: Wu, Chongsheng, Liu, Qian, Wang, Yu, Chen, Jianfeng, Qi, Binghao, Zhang, Huaiwu, Liu, Yingli
• Format: Article
• Language: English
• Subjects: Data storage; Deoxidizing; Electric fields; Electric polarization; Four-state memory; Information storage; Magnetic fields; Magnetoelectric coefficient; Memory devices; Multiferroic hexaferrite; Multiferroic materials; Room temperature
• ISSN: 0925-8388; 1873-4669
• DOI: 10.1016/j.jallcom.2018.11.256

Single-phase multiferroic hexaferrite Sr3Co2Fe21.6O37.4 was prepared by using a conventional solid-state reaction. The maximum electric polarization and magnetoelectric coefficient were Pm = 12.8 μC/m2 and αm = 600 ps/m, respectively. We found that the as-prepared specimen exhibited four different electric phase states from 0 to 1 T. Furthermore, the magnetic field and electric field poled the specimen's four different electric phase states and exhibited four different magnetoelectric effects. Based on these characteristics, a nonvolatile four-state memory device was implemented at room temperature. The information is written by the magnetic field and electric field in the poling process and read out by αm with a small scanning field. This kind of nonvolatile four-state memory device has the benefits of having a simple structure and high storage density, it is easy to integrate, and it can be performed at room temperature. Our work enriched the magnetoelectric effect of Sr3Co2Fe24O41 and will promote the application of multiferroic hexaferrites for information storage devices. •Sr3Co2Fe21.6O37.4 was prepared, Pm = 12.8 μC/m2 and αm = 600 ps/m were obtained.•The specimen exhibited different magnetoelectric effect after different poling procedures.•A nonvolatile four-state memory device was implemented at room temperature.