Annealing effect on the bipolar resistive switching memory of NiZn ferrite films

A detailed understanding of the resistive switching behaviors and relevant physical mechanism is key to controlling nonvolatile memory devices. Pt/Ni0.5Zn0.5Fe2O4/Pt was synthesized by radio frequency magnetron sputtering method at room temperature. The typical bipolar resistive switching effects we...

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Bibliographic Details
Published in:Journal of alloys and compounds 2019-03, Vol.779, p.794-799
Main Authors: Wu, Lei, Dong, Chunhui, Wang, Xiaoqiang, Li, Jinsheng, Li, Mingya
Format: Article
Language:English
Subjects:
Annealing
Conductive filament
Ferrites
Magnetron sputtering
Memory devices
Ni0.5Zn0.5Fe2O4 thin film
Random access memory
Resistive switching effect
Spinel ferrite
Switching
Thin films
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Summary:A detailed understanding of the resistive switching behaviors and relevant physical mechanism is key to controlling nonvolatile memory devices. Pt/Ni0.5Zn0.5Fe2O4/Pt was synthesized by radio frequency magnetron sputtering method at room temperature. The typical bipolar resistive switching effects were detected in the annealed Ni0.5Zn0.5Fe2O4 thin films. Annealing effect on the bipolar resistive switching memory have been investigated. Good stability, identifiability, and excellent retention were obtained at the same time. Conductive filament mechanism, consisting of oxygen vacancies and reduced cations, was used to explain the physical mechanism in Pt/NZFO/Pt memory devices. The present results further enhance the applicability of spinel ferrite oxides in nonvolatile memory devices. •The bipolar resistive switching effects were detected in the NZFO thin films.•Annealing effect on the bipolar resistive switching memory have been investigated.•Good stability, identifiability, and excellent retention were obtained in devices.•The physical mechanism have been explored in Pt/NZFO/Pt memory devices.•Oxygen vacancies and reduced cations play a key role in RS behaviors.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2018.11.345