The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates

• Published in: Journal of crystal growth 2019-02, Vol.507, p.175-179
• Main Authors: Yan, G.G., Liu, X.F., Shen, Z.W., Zhao, W.S., Wang, L., Cui, Y.X., Li, J.T., Zhang, F., Sun, G.S., Zeng, Y.P.
• Format: Article
• Language: English
• Subjects: A1. Characterization; A2. Growth from vapor; A3. Chemical vapor deposition processes; B2. Semiconducting silicon compounds; Crystal growth; Epitaxial growth; Morphology; Process parameters; Silicon carbide; Silicon substrates
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2018.10.041

•4H-SiC epilayer have been deposited on on-axis, 4° and 8° off-angle substrates with different growth temperature ranging from 1500 °C to 1650 °C.•The growth rate shows an upward trend with the increase of growth temperature.•It is demonstrated that the growth temperature plays a crucial role in 4H-SiC homoepitaxial growth on different off-angle substrates. In this paper, homoepitaxial growth was performed on on-axis, 4° and 8° off-axis 4H-SiC (0001) Si-face substrate by using our home-made vertical hot wall LPCVD reactor and SiH4 + C2H4 + H2 + HCl gas system. The influence mechanism of growth temperature on the crystal quality, the growth rate and surface morphology is studied. The growth rate increased with the increase of growth temperature, and the epitaxial wafer surface morphology is more excellent by the increasing of off-angle. The results demonstrate that growth temperature is a fundamental process parameter to optimize.