MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate

•We have demonstrated SCH-MQW FP LD on wafer bonded InP/Si substrate using MOVPE.•We have obtained mirror-like surface without cross-hatch or dislocation after the crystal growth.•We have successfully obtained room temperature lasing with threshold current density of 2.85 kA/cm2 under pulsed current...

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Bibliographic Details
Published in:Journal of crystal growth 2019-02, Vol.507, p.93-97
Main Authors: Sugiyama, Hirokazu, Uchida, Kazuki, Han, Xu, Periyanayagam, Gandhi Kallarasan, Aikawa, Masaki, Hayasaka, Natsuki, Shimomura, Kazuhiko
Format: Article
Language:English
Subjects:
A3. Metalorganic vapor phase epitaxy
A3. Quantum wells
B2. Semiconducting indium phosphide
B3. Laser diodes
Crystal growth
Crystal structure
Diodes
Dislocations
Epitaxial growth
Fabry-Perot interferometers
Gallium indium arsenide phosphide
Hatches
Heterostructures
Indium phosphides
Lasers
Metalorganic chemical vapor deposition
Multi Quantum Wells
Pulsed current
Semiconductor lasers
Silicon substrates
Threshold currents
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Summary:•We have demonstrated SCH-MQW FP LD on wafer bonded InP/Si substrate using MOVPE.•We have obtained mirror-like surface without cross-hatch or dislocation after the crystal growth.•We have successfully obtained room temperature lasing with threshold current density of 2.85 kA/cm2 under pulsed current condition. We have successfully obtained a metalorganic vapor phase epitaxy (MOVPE) grown GaInAsP/GaInAsP separate confinement heterostructure structure multi-quantum well (SCH-MQW) laser diode (LD) on a directly InP/Si substrate. InP/Si substrate was prepared by the hydrophilic bonding of a thin InP film (1 µm) and silicon substrate with annealing at 400 °C. After crystal growth of the SCH-MQW laser structure on the InP/Si substrate, the surface was mirror-like and without any cross hatches or dislocations. Room temperature pulsed current lasing was then achieved using a Fabry-Perot cavity LD with a threshold current density of 2.85 kA/cm2.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2018.10.024