A Study of Ohmic Contacts of Power Photovoltaic Converters

Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level of the contact layer on the free-carrier density and the contact resistivity was examined. A technique for fabrication of 2- to 4-μm-thick o...

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Bibliographic Details
Published in:Technical physics letters 2018-12, Vol.44 (12), p.1198-1200
Main Authors: Malevskaya, A. V., Khvostikov, V. P., Soldatenkov, F. Yu, Khvostikova, O. A., Vlasov, A. S., Andreev, V. M.
Format: Article
Language:English
Subjects:
Carrier density
Classical and Continuum Physics
Contact resistance
Converters
Deposition
Gold
Morphology
Physics
Physics and Astronomy
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Summary:Ohmic contacts of power AlGaAs/GaAs-based photovoltaic converters were studied, and a technique for their fabrication was developed. Effect of the doping level of the contact layer on the free-carrier density and the contact resistivity was examined. A technique for fabrication of 2- to 4-μm-thick ohmic contacts with electrochemical deposition of gold layers was studied. The effect of deposition modes on the surface morphology of ohmic contacts and their solidity and conductivity was revealed.
ISSN:1063-7850
1090-6533
DOI:10.1134/S1063785019010140