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Characterization of the Hamamatsu VUV4 MPPCs for nEXO
In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features...
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Published in: | arXiv.org 2019-06 |
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Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
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Online Access: | Get full text |
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Summary: | In this paper we report on the characterization of the Hamamatsu VUV4 (S/N: S13370-6152) Vacuum Ultra-Violet (VUV) sensitive Silicon Photo-Multipliers (SiPMs) as part of the development of a solution for the detection of liquid xenon scintillation light for the nEXO experiment. Various SiPM features, such as: dark noise, gain, correlated avalanches, direct crosstalk and Photon Detection Efficiency (PDE) were measured in a dedicated setup at TRIUMF. SiPMs were characterized in the range \(163 \text{ } \text{K} \leq \text{T}\leq 233 \text{ } \text{K}\). At an over voltage of \(3.1\pm0.2\) V and at \(\text{T}=163 \text{ }\text{K}\) we report a number of Correlated Avalanches (CAs) per pulse in the \(1 \upmu\text{s}\) interval following the trigger pulse of \(0.161\pm0.005\). At the same settings the Dark-Noise (DN) rate is \(0.137\pm0.002 \text{ Hz/mm}^{2}\). Both the number of CAs and the DN rate are within nEXO specifications. The PDE of the Hamamatsu VUV4 was measured for two different devices at \(\text{T}=233 \text{ }\text{K}\) for a mean wavelength of \(189\pm7\text{ nm}\). At \(3.6\pm0.2\) V and \(3.5\pm0.2\) V of over voltage we report a PDE of \(13.4\pm2.6\text{ }\%\) and \(11\pm2\%\), corresponding to a saturation PDE of \(14.8\pm2.8\text{ }\%\) and \(12.2\pm2.3\%\), respectively. Both values are well below the \(24\text{ }\%\) saturation PDE advertised by Hamamatsu. More generally, the second device tested at \(3.5\pm0.2\) V of over voltage is below the nEXO PDE requirement. The first one instead yields a PDE that is marginally close to meeting the nEXO specifications. This suggests that with modest improvements the Hamamatsu VUV4 MPPCs could be considered as an alternative to the FBK-LF SiPMs for the final design of the nEXO detector. |
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ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.1903.03663 |