Quality Control of a Multilayer Spin-Tunnel Structure with the Use of a Combination of Analytical Methods

Several experimental methods for controlling the quality of the multilayer film structures used for the fabrication of magnetic tunneling junctions (MTJs) are considered. A multilayer magnetoresistive structure of the following composition is deposited using magnetron sputtering on a Singulus Timari...

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Bibliographic Details
Published in:Russian microelectronics 2018-11, Vol.47 (6), p.381-387
Main Authors: Trushin, O. S., Simakin, S. G., Vasiliev, S. V., Smirnov, E. A.
Format: Article
Language:English
Subjects:
Composition
Control methods
Crystal structure
Electrical Engineering
Electrons
Engineering
Iron compounds
Magnetoresistivity
Magnetron sputtering
Multilayers
Nickel compounds
Quality control
Transmission electron microscopy
X-ray diffraction
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Summary:Several experimental methods for controlling the quality of the multilayer film structures used for the fabrication of magnetic tunneling junctions (MTJs) are considered. A multilayer magnetoresistive structure of the following composition is deposited using magnetron sputtering on a Singulus Timaris cluster tool: Ta/CuN/Ta/NiFe/IrMn/CoFe/Ru/CoFeB/MgO/CoFeB/Ta/Ru. A layer-by-layer elemental analysis of the composition of the deposited structure is carried out by the time of flight (TOF) secondary ion mass-spectrometry on a TOF.SIMS 5 installation. A cross section of the structure is analyzed using transmission electron microscopy (TEM) (Tecnai G2 F20 U-TWIN). The crystal structure of the layers is characterized using X-ray diffraction. A comparison of the data obtained using different analytical methods lets us estimate the accuracy of the analysis and the quality of the structure intended for further MTJ fabrication.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739718060094