Selective Ohmic Contact Formation on Schottky Type AlGaN/GaN UV Sensors Using Local Breakdown

Local annealing method was developed to change the Ni-AlGaN/GaN and Ni-GaN rectifying contacts into ohmic contacts by using the dielectric breakdown of a sacrificial insulator. The current increased 10 5 times in an AlGaN/GaN Schottky diode as a result of the annealing step. An interdigitated Schott...

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Bibliographic Details
Published in:IEEE sensors journal 2019-04, Vol.19 (8), p.2946-2949
Main Authors: Seol, Jeong-Hoon, Hahm, Sung-Ho
Format: Article
Language:English
Subjects:
AlGaN
Aluminum gallium nitride
Aluminum gallium nitrides
Annealing
Bias
Contact resistance
Dielectric breakdown
Diodes
Electrodes
Gallium nitride
Gallium nitrides
GaN
local breakdown
Schottky diodes
Schottky electrode
Sensors
UV photodiode
Wide band gap semiconductors
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Summary:Local annealing method was developed to change the Ni-AlGaN/GaN and Ni-GaN rectifying contacts into ohmic contacts by using the dielectric breakdown of a sacrificial insulator. The current increased 10 5 times in an AlGaN/GaN Schottky diode as a result of the annealing step. An interdigitated Schottky metal-semiconductor-metal ultraviolet (UV) sensor was fabricated using the locally annealed electrodes. The UV to visible rejection ratio of the GaN-based UV sensor was 5.2 at forward bias to 467.9 at a reverse bias of −1 V. Unlike typical annealing methods, the local annealing method will be useful to change the contact property on the probing stage even after finishing the whole fabrication processes.
ISSN:1530-437X
1558-1748
DOI:10.1109/JSEN.2019.2892556