Antifuse OTP Cell in a Cross-Point Array by Advanced CMOS FinFET Process

A new antifuse one-time programmable (OTP) memory array by the 16-nm FinFET high- \pmb \kappa metal gate process is proposed and demonstrated. The OTP cells are programed by gate dielectric breakdown. The asymmetric {I} - {V} characteristics can be achieved by controlling the current compliance l...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2019-04, Vol.66 (4), p.1729-1733
Main Authors: Kuo, Ren-Jay, Chang, Fu-Cheng, King, Ya-Chin, Lin, Chrong-Jung
Format: Article
Language:English
Subjects:
Antifuse
Antifuses
Arrays
CMOS
CMOS technology
Dielectric breakdown
Dielectrics
Electric breakdown
FinFET
FinFETs
gate dielectric breakdown
high-<italic xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">κ metal gate (HKMG)
Logic gates
Metals
Selectors
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Summary:A new antifuse one-time programmable (OTP) memory array by the 16-nm FinFET high- \pmb \kappa metal gate process is proposed and demonstrated. The OTP cells are programed by gate dielectric breakdown. The asymmetric {I} - {V} characteristics can be achieved by controlling the current compliance level during its programing operation. Based on the diode-like postbreakdown {I} - {V} characteristics, a high-density cross-point array without cell selectors is demonstrated, by the advanced FinFET CMOS technology.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2019.2900282