Phosphorus-doped (113) CVD diamond: A breakthrough towards bipolar diamond devices

Among wide bandgap semiconductors, diamond presents physical properties particularly suited for high performance power electronic devices. Growth and doping of chemical vapor deposited (CVD) diamond have been mainly optimized in the conventional (100) crystal orientation, highly studied on (111) sur...

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Bibliographic Details
Published in:Applied physics letters 2019-03, Vol.114 (11)
Main Authors: Pinault-Thaury, Marie-Amandine, Temgoua, Solange, Gillet, Rémi, Bensalah, Hakima, Stenger, Ingrid, Jomard, François, Issaoui, Riadh, Barjon, Julien
Format: Article
Language:English
Subjects:
Applied physics
Chemical vapor deposition
Condensed Matter
Crystal structure
Diamond films
Diamonds
Electronic devices
Materials Science
Organic chemistry
Orientation
Phosphorus
Physical properties
Physics
Substrates
Wide bandgap semiconductors
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Summary:Among wide bandgap semiconductors, diamond presents physical properties particularly suited for high performance power electronic devices. Growth and doping of chemical vapor deposited (CVD) diamond have been mainly optimized in the conventional (100) crystal orientation, highly studied on (111) surfaces and recently initiated on (113). This last orientation seems very promising, as is shown for intrinsic and p-type doped diamonds. In this work, we report the growth of CVD phosphorus doped diamond films on (113)-oriented substrates. The (113) homoepitaxial layers present a phosphorus content in the range of 7.2 × 1016 up to 4.5 × 1019 at/cm3 for thicknesses between 0.6 μm and 4 μm. The high quality and the full incorporation of phosphorus into donor sites found for the (113) crystal orientation open new architecture possibilities for bipolar diamond devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5079924