Abnormal anomalous Hall effect in permalloy thin film driven by an adjacent silicon oxide layer

•The change of sign of anomalous of permalloy film was observed.•The modulation of anomalous Hall effect by oxide in permalloy was found.•The spin accumulation induced by AHE was explored in a multilayer structure. We report that the unusual behavior of anomalous Hall effect (AHE) in permalloy (Fe20...

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Bibliographic Details
Published in:Journal of magnetism and magnetic materials 2019-05, Vol.478, p.187-191
Main Authors: Hao, Runrun, Su, Jian, Huang, Qikun, Zhou, Tie, Cai, Jianwang, Bai, Lihui, Han, Guangbing, Yu, Shuyun, Liu, GuoLei, Yan, Shishen, Kang, Shishou
Format: Article
Language:English
Subjects:
Anomalous Hall effect
Asymmetry
Electromagnetism
Electron spin
Ferrous alloys
Hall effect
Interface
Magnetic alloys
Multilayers
Nonlocal measurement
Polarization (spin alignment)
Silicon dioxide
Silicon oxides
Thin films
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Summary:•The change of sign of anomalous of permalloy film was observed.•The modulation of anomalous Hall effect by oxide in permalloy was found.•The spin accumulation induced by AHE was explored in a multilayer structure. We report that the unusual behavior of anomalous Hall effect (AHE) in permalloy (Fe20Ni80, Py) thin film with silicon oxide (SiO2) as an adjacent layer. It is found that sign of AHE changes from positive to negative with decrement in thickness of Py. Through the AHE measurement, we demonstrate that this unusual behavior originates from the interface of Py/SiO2 rather from the structural inversion asymmetry. In the Pt/YIG/Cu/Py/SiO2 multilayer structure with a charge current injected in the Py layer, the information on spin accumulation at the YIG/Cu interface induced by the AHE in Py, can be obtained from the nonlocal voltage measured in the Pt layer. Through the nonlocal measurement, it is found, however, the electrons with same spin for interfacial Py near the SiO2 layer and bulk Py are scattered to the same direction. Hence we can deduce that the sign of spin polarization of the conductivity closely related to the asymmetry in density of states at the Fermi level for interfacial Py and bulk Py should be opposite to each other, which is responsible for the abnormal AHE observed. Our results demonstrate that oxide layer can drive the change of sign of AHE of Py, which provide an alternative way of manipulating the spin-related transport.
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2019.01.113