Loading…
Toward a highly selective artificial saliva sensor using printed hybrid field effect transistors
•Hybrid ISFETs were fabricated by 3D printing for source and drain electrodes on inorganic semiconductor devices.•Hybrid ISFETs demonstrated high sensitivity for ammonium ions (NH4+), potassium ions (K+) and calcium ions (Ca2+).•Highly selective ISFETs allow to detect ammonium ion concentration in a...
Saved in:
Published in: | Sensors and actuators. B, Chemical Chemical, 2019-04, Vol.285, p.186-192 |
---|---|
Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | •Hybrid ISFETs were fabricated by 3D printing for source and drain electrodes on inorganic semiconductor devices.•Hybrid ISFETs demonstrated high sensitivity for ammonium ions (NH4+), potassium ions (K+) and calcium ions (Ca2+).•Highly selective ISFETs allow to detect ammonium ion concentration in artificial saliva with multiple interference ions.
Ion selective field effect transistors (ISFETs) have been widely used in the biological and environmental sensing applications. However, the rigid feature of common ISFETs blocked the real-time monitoring applications. Here, we report a feasible 3D printing method to fabricate flexible ISFETs by hybridization of printed organic ion selective electrodes and inorganic transistors. The fabricated ISFETs demonstrated high sensitivity, ranged about 100 mV/decade, towards ions such as ammonium (NH4+), potassium (K+), and calcium (Ca2+). Furthermore, the fabricated hybrid ISFETs showed their distinct selectivity from the mixture of varied interference ions as an artificial saliva. This capability provides an integrated platform for a comprehensive ion analysis by closely monitoring interrelated saliva parameters as wearable healthcare solutions manufactured by 3D printing methods. |
---|---|
ISSN: | 0925-4005 1873-3077 |
DOI: | 10.1016/j.snb.2019.01.062 |