Dislocation Analysis of Semiconductor Devices using 3D Rotation Imaging Technique of Dedicated STEM

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

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Bibliographic Details
Published in:Microscopy and microanalysis 2009-07, Vol.15 (S2), p.338-339
Main Authors: Back, TS, Lee, SJ, Jung, JW, Kim, JH, Kim, HJ
Format: Article
Language:English
Subjects:
Focused Ion Beam (FIB) Science and Technology: Fundamental Interactions,Instrumentation and Applications
Instrumentation and Techniques
Online Access:Get full text
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Description
Summary:Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
ISSN:1431-9276
1435-8115
DOI:10.1017/S1431927609093660