Dislocation Analysis of Semiconductor Devices using 3D Rotation Imaging Technique of Dedicated STEM

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

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Published in:Microscopy and microanalysis 2009-07, Vol.15 (S2), p.338-339
Main Authors: Back, TS, Lee, SJ, Jung, JW, Kim, JH, Kim, HJ
Format: Article
Language:English
Subjects:
Focused Ion Beam (FIB) Science and Technology: Fundamental Interactions,Instrumentation and Applications
Instrumentation and Techniques
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container_end_page 339
container_issue S2
container_start_page 338
container_title Microscopy and microanalysis
container_volume 15
creator Back, TS
Lee, SJ
Jung, JW
Kim, JH
Kim, HJ
description Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009
doi_str_mv 10.1017/S1431927609093660
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subjects Focused Ion Beam (FIB) Science and Technology: Fundamental Interactions,Instrumentation and Applications
Instrumentation and Techniques
title Dislocation Analysis of Semiconductor Devices using 3D Rotation Imaging Technique of Dedicated STEM
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