High-temperature deep-level transient spectroscopy system for defect studies in wide-bandgap semiconductors

Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectroscopy (HT-DLTS) system was developed for measuremen...

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Bibliographic Details
Published in:arXiv.org 2019-04
Main Authors: Majdi, S, Gabrysch, M, Suntornwipat, N, Burmeister, F, Jonsson, R, Kovi, K K, Hallen, A
Format: Article
Language:English
Subjects:
Deep level transient spectroscopy
Defects
High temperature
Level (quantity)
Schottky diodes
Spectrum analysis
Temperature
Wide bandgap semiconductors
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Summary:Full investigation of deep defect states and impurities in wide-bandgap materials by employing commercial transient capacitance spectroscopy is a challenge, demanding very high temperatures. Therefore, a high-temperature deep-level transient spectroscopy (HT-DLTS) system was developed for measurements up to 1100 K. The upper limit of the temperature range allows for the study of deep defects and trap centers in the bandgap, deeper than previously reported by DLTS characterization in any material. Performance of the system was tested by conducting measurements on the well-known intrinsic defects in n-type 4H-SiC in the temperature range 300-950 K. Experimental observations performed on 4H-SiC Schottky diodes were in good agreement with the literatures. However, the DLTS measurements were restricted by the operation and quality of the electrodes.
ISSN:2331-8422
DOI:10.48550/arxiv.1904.02589