Growth behavior of wafer-scale two-dimensional MoS2 layer growth using metal-organic chemical vapor deposition

•Wafer-scale homogeneous MoS2 is successfully grown using MOCVD.•The pre-flow of H2S promotes lateral growth of MoS2.•The layer of MoS2 could be controlled from a monolayer to multilayers.•The MoS2 growth mode could be changed 3D to 2D by controlling parameters. In this study, we achieved a wafer-sc...

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Bibliographic Details
Published in:Journal of crystal growth 2019-03, Vol.510, p.50-55
Main Authors: Kwak, Taemyung, Lee, Juhoon, So, Byeongchan, Choi, Uiho, Nam, Okhyun
Format: Article
Language:English
Subjects:
2D materials
A3. Metalorganic vapor phase epitaxy
Chemical vapor deposition
Metalorganic chemical vapor deposition
Molybdenum disulfide
Organic chemicals
Organic chemistry
Precursors
Sapphire
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Summary:•Wafer-scale homogeneous MoS2 is successfully grown using MOCVD.•The pre-flow of H2S promotes lateral growth of MoS2.•The layer of MoS2 could be controlled from a monolayer to multilayers.•The MoS2 growth mode could be changed 3D to 2D by controlling parameters. In this study, we achieved a wafer-scale molybdenum disulfide (MoS2) layer growth using metal-organic chemical vapor deposition. It was systematically investigated the growth behavior of the layered MoS2 on a c-plane sapphire as a function of the precursor pre-flow, ratio of precursors, and growth temperature. Our results indicated that the MoS2 growth could be changed to the quasi two-dimensional (2D) growth mode from the three-dimensional (3D) growth mode or vice versa by controlling the parameters. Finally, the wafer-scale homogeneous MoS2 growth was successfully demonstrated.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2019.01.020