Polarized cathodoluminescence for strain measurement

Strain can alter the properties of semiconductor materials. The selection of a strain measurement technique is a trade-off between sensitivity, resolution, and field of view, among other factors. We introduce a new technique based on the degree of polarization of cathodoluminescence (CL), which has...

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Bibliographic Details
Published in:Review of scientific instruments 2019-04, Vol.90 (4), p.043701-043701
Main Authors: Fouchier, M., Rochat, N., Pargon, E., Landesman, J. P.
Format: Article
Language:English
Subjects:
Cathodoluminescence
Engineering Sciences
Feasibility studies
Field of view
Materials selection
Measurement techniques
Optics
Phosphides
Photonic
Physics
Scientific apparatus & instruments
Semiconductor materials
Sensitivity
Strain measurement
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Summary:Strain can alter the properties of semiconductor materials. The selection of a strain measurement technique is a trade-off between sensitivity, resolution, and field of view, among other factors. We introduce a new technique based on the degree of polarization of cathodoluminescence (CL), which has excellent sensitivity (10−5), an intermediate resolution (about 100 nm), and an adjustable field of view. The strain information provided is complementary to that obtained by CL spectroscopy. Feasibility studies are presented. The experimental setup and the data treatment procedure are described in detail. Current limitations are highlighted. The technique is tested on the cross section of bulk indium phosphide samples strained by a patterned hard mask.
ISSN:0034-6748
1089-7623
DOI:10.1063/1.5078506