Excitonic complexes in MOCVD-grown InGaAs/GaAs quantum dots emitting at telecom wavelengths

Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window....

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Bibliographic Details
Published in:arXiv.org 2019-08
Main Authors: Mrowiński, Paweł, Musiał, Anna, Gawarecki, Krzysztof, Dusanowski, Łukasz, Heuser, Tobias, Srocka, Nicole, Quandt, David, Strittmatter, André, Rodt, Sven, Reitzenstein, Stephan, Sęk, Grzegorz
Format: Article
Language:English
Subjects:
Configuration interaction
Electronic structure
Emissions control
Gallium arsenide
Indium gallium arsenides
Metalorganic chemical vapor deposition
Optical properties
Organic chemicals
Organic chemistry
Quantum dots
Telecommunications
Wavelengths
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Summary:Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour deposition and emitting at the 1300 nm telecommunication window. Single QD properties have been determined experimentally for a number of nanostructures by means of excitation-power-dependent and polarization-resolved microphotoluminescence and further compared with the results of confined states calculations employing the 8-band kp theory combined with the configuration interaction method. The origin of excitonic complexes has been exemplarily confirmed based on magnetooptical and correlation spectroscopy study. Understanding the influence of structural parameters and compositions (of QDs themselves as well as in the neighbouring strain reducing layer) allows to distinguish which of them are crucial to control the emission wavelength to achieve the telecommunication spectral range or to affect binding energies of the fundamental excitonic complexes. The obtained results provide deeper knowledge on control and on limitations of the investigated structures in terms of good spectral isolation of individual optical transitions and the spatial confinement that are crucial in view of QD applications in single-photon sources of high purity at telecom wavelengths.
ISSN:2331-8422
DOI:10.48550/arxiv.1811.01346