Negative magnetoresistance in epitaxial films of neodymium nickelate

A significant increase in conductivity under an applied magnetic field or large negative magnetoresistance up to several percent is observed at low temperatures in epitaxial perovskite NdNiO3 films. The (20–100 nm) strained films are grown on compressive (001)LaAlO3 and tensile (001)(La0.3Sr0.7)(Al0...

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Bibliographic Details
Published in:Physical review. B 2019-02, Vol.99 (8), p.085111, Article 085111
Main Authors: Stupakov, A., Pacherova, O., Kocourek, T., Jelinek, M., Dejneka, A., Tyunina, M.
Format: Article
Language:English
Subjects:
Conductivity
Disproportionation
Hopping conduction
Magnetism
Magnetoresistance
Magnetoresistivity
Neodymium
Nickel
Perovskites
Substrates
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Summary:A significant increase in conductivity under an applied magnetic field or large negative magnetoresistance up to several percent is observed at low temperatures in epitaxial perovskite NdNiO3 films. The (20–100 nm) strained films are grown on compressive (001)LaAlO3 and tensile (001)(La0.3Sr0.7)(Al0.65Ta0.35)O3 substrates. The negative magnetoresistance is found in the insulating phase, where the hopping mechanism of conductivity is revealed. It is shown that the presence and Zeeman splitting of localized states are responsible for conductivity and magnetoresistance. The localized states are suggested to emerge due to thermally induced local disorder in the Ni-O bond disproportionation. Such disorder can also lead to a phase coexistence in a broad temperature range.
ISSN:2469-9950
2469-9969
DOI:10.1103/PhysRevB.99.085111