Temperature sensitivity analysis of vertical tunneling based dual metal Gate TFET on analog/RF FOMs

In this paper, we present a rigorous numerical simulation study on temperature sensitivity for tunnel field effect transistor (TFET). The presented temperature sensitivity analysis is studied on different digital, analog and RF figure of merits for conventional TFETs. In addition, sensitivities of t...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2019-05, Vol.125 (5), Article 316
Main Authors: Paras, Neha, Chauhan, Sudakar Singh
Format: Article
Language:English
Subjects:
Applied physics
Characterization and Evaluation of Materials
Comparative studies
Computer simulation
Condensed Matter Physics
Field effect transistors
Machines
Manufacturing
Materials science
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Semiconductor devices
Sensitivity analysis
Surfaces and Interfaces
Temperature
Thin Films
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Summary:In this paper, we present a rigorous numerical simulation study on temperature sensitivity for tunnel field effect transistor (TFET). The presented temperature sensitivity analysis is studied on different digital, analog and RF figure of merits for conventional TFETs. In addition, sensitivities of the conventional TFETs are compared with proposed vertical tunneling-based TFET (V-DMGTFET) and detailed discussion is presented for the same. In comparative study, we observed that proposed V-DMGTFET is less sensitive to temperature variations compared to the conventional TFETs. This indicates that proposed V-DMGVTFET is more reliable to use in low power application at high temperatures compared to the conventional TFET.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-019-2621-x