Bipolar Junction Transistors: Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals (Adv. Funct. Mater. 17/2019)

In article number 1807893, Shaozhi Deng and co‐workers present a study of Van der Waals bipolar junction transistors based on vertically stacked 2D materials (V2D‐BJT), which use a MoS2/WSe2/MoS2 heterostructure in an n‐p‐n configuration (represented by the image). The V2D‐BJT shows excellent charac...

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Bibliographic Details
Published in:Advanced functional materials 2019-04, Vol.29 (17), p.n/a
Main Authors: Liu, Liwei, Xu, Ningsheng, Zhang, Yu, Zhao, Peng, Chen, Huanjun, Deng, Shaozhi
Format: Article
Language:English
Subjects:
Atomic properties
bipolar junction transistor
gas sensor
Gas sensors
Heterostructures
Junction transistors
Materials science
Molybdenum disulfide
MoS2/WSe2/MoS2 heterostructure
Power amplifiers
Semiconductor devices
Transistors
Two dimensional materials
van der Waals force
vertical stacking
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Summary:In article number 1807893, Shaozhi Deng and co‐workers present a study of Van der Waals bipolar junction transistors based on vertically stacked 2D materials (V2D‐BJT), which use a MoS2/WSe2/MoS2 heterostructure in an n‐p‐n configuration (represented by the image). The V2D‐BJT shows excellent characteristics of a low power amplifier, and excellent gas sensing performance with fast response and recovery times.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.201970113