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Raman analysis of strained graphene grown on dewetted cobalt
Graphene grows onto cobalt by means of diffusion of carbon atoms during the isothermal stage of exposure to hydrocarbon precursor, followed by precipitation during cooling. This method, largely applied with nickel catalyst, is known to produce continuous, but not uniform, layers with the concurrent...
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Published in: | Journal of Raman spectroscopy 2019-04, Vol.50 (4), p.499-508 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Graphene grows onto cobalt by means of diffusion of carbon atoms during the isothermal stage of exposure to hydrocarbon precursor, followed by precipitation during cooling. This method, largely applied with nickel catalyst, is known to produce continuous, but not uniform, layers with the concurrent presence of mono‐ and poly‐graphene areas. With the aid of Raman mapping of graphene still lying onto its catalyst, we are able to consider the possible origins for the observed distortions of the phonon modes with respect to the well‐known picture of the monolayer material. Optical effects, doping, the presence of multilayered islands, and strain are kept into account. It is shown that some observations can be interpreted in terms of the occurrence of isotropic strain with the uniaxial component superimposed at the metal discontinuities. Strain is proposed to originate from the difference between the thermal expansion coefficients of graphene and cobalt. The present paper shows that inhomogeneities in graphene grown onto catalysts with high C solubility are not always directly related to excess of precipitation. The observation of strain in as‐grown graphene opens the possibility of tailoring the electronic density of states via strain engineering directly during growth.
Raman mapping of graphene grown onto holes resulting from dewetting of the Co substrate during the chemical vapor deposition process reveals the occurrence of strain. Strain is proposed to originate from the difference between the thermal expansion coefficients of graphene and cobalt. |
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ISSN: | 0377-0486 1097-4555 |
DOI: | 10.1002/jrs.5552 |