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Improvements of surface morphology and electrical transport properties of single-crystalline In2O3(111) thin films by postgrowth annealing
We have grown single-crystalline In2O3 films on yttria-stabilized zirconia (001) and (111) substrates by reactive electron beam evaporation, and investigated the effects of ex situ postgrowth annealing in oxygen atmosphere on the surface morphology and electrical transport properties. For the (111)-...
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Published in: | Japanese Journal of Applied Physics 2019-03, Vol.58 (3), p.030909 |
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container_issue | 3 |
container_start_page | 030909 |
container_title | Japanese Journal of Applied Physics |
container_volume | 58 |
creator | Fujita, Yuichi Matsuzaki, Yasufumi Kon, Shintaro Yasukawa, Yukiko Koizumi, Hiroki Yanagihara, Hideto Saito, Hidekazu |
description | We have grown single-crystalline In2O3 films on yttria-stabilized zirconia (001) and (111) substrates by reactive electron beam evaporation, and investigated the effects of ex situ postgrowth annealing in oxygen atmosphere on the surface morphology and electrical transport properties. For the (111)-oriented film, we observed a flat surface in atomic scale as well as high Hall mobility up to 130 cm2 V−1 s−1 with carrier density of 2.3 × 1019 cm−3 at room temperature. The results indicate that the postgrowth annealing is effective in fabricating high-quality In2O3 film. |
doi_str_mv | 10.7567/1347-4065/aafdec |
format | article |
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For the (111)-oriented film, we observed a flat surface in atomic scale as well as high Hall mobility up to 130 cm2 V−1 s−1 with carrier density of 2.3 × 1019 cm−3 at room temperature. The results indicate that the postgrowth annealing is effective in fabricating high-quality In2O3 film.</description><identifier>ISSN: 0021-4922</identifier><identifier>EISSN: 1347-4065</identifier><identifier>DOI: 10.7567/1347-4065/aafdec</identifier><identifier>CODEN: JJAPB6</identifier><language>eng</language><publisher>Tokyo: IOP Publishing</publisher><subject>Annealing ; Carrier density ; Crystal structure ; Crystallinity ; Electron beams ; Electron mobility ; Flat surfaces ; Hall effect ; Indium oxides ; Morphology ; Single crystals ; Substrates ; Thin films ; Transport properties ; Yttria-stabilized zirconia ; Yttrium oxide ; Zirconium dioxide</subject><ispartof>Japanese Journal of Applied Physics, 2019-03, Vol.58 (3), p.030909</ispartof><rights>2019 The Japan Society of Applied Physics</rights><rights>Copyright Japanese Journal of Applied Physics Mar 1, 2019</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-7520-0689</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1347-4065/aafdec/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,776,780,27901,27902,38845,53815</link.rule.ids></links><search><creatorcontrib>Fujita, Yuichi</creatorcontrib><creatorcontrib>Matsuzaki, Yasufumi</creatorcontrib><creatorcontrib>Kon, Shintaro</creatorcontrib><creatorcontrib>Yasukawa, Yukiko</creatorcontrib><creatorcontrib>Koizumi, Hiroki</creatorcontrib><creatorcontrib>Yanagihara, Hideto</creatorcontrib><creatorcontrib>Saito, Hidekazu</creatorcontrib><title>Improvements of surface morphology and electrical transport properties of single-crystalline In2O3(111) thin films by postgrowth annealing</title><title>Japanese Journal of Applied Physics</title><addtitle>Jpn. J. Appl. Phys</addtitle><description>We have grown single-crystalline In2O3 films on yttria-stabilized zirconia (001) and (111) substrates by reactive electron beam evaporation, and investigated the effects of ex situ postgrowth annealing in oxygen atmosphere on the surface morphology and electrical transport properties. For the (111)-oriented film, we observed a flat surface in atomic scale as well as high Hall mobility up to 130 cm2 V−1 s−1 with carrier density of 2.3 × 1019 cm−3 at room temperature. The results indicate that the postgrowth annealing is effective in fabricating high-quality In2O3 film.</description><subject>Annealing</subject><subject>Carrier density</subject><subject>Crystal structure</subject><subject>Crystallinity</subject><subject>Electron beams</subject><subject>Electron mobility</subject><subject>Flat surfaces</subject><subject>Hall effect</subject><subject>Indium oxides</subject><subject>Morphology</subject><subject>Single crystals</subject><subject>Substrates</subject><subject>Thin films</subject><subject>Transport properties</subject><subject>Yttria-stabilized zirconia</subject><subject>Yttrium oxide</subject><subject>Zirconium dioxide</subject><issn>0021-4922</issn><issn>1347-4065</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNptkU1LAzEQhoMoWKt3jwEvFVybz93uUYofhUIveg7JbrLdZZusSar0L_irTVnRi6dhhud9Z4YXgGuM7gueF3NMWZExlPO5lKbW1QmY_I5OwQQhgjNWEnIOLkLoUptzhifga7UbvPvQO21jgM7AsPdGVhrunB-2rnfNAUpbQ93rKvq2kj2MXtowOB9hUg7ax1aPytY2vc4qfwhR9n1rNVxZsqEzjPEtjNvWQtP2uwDVAQ4uxMa7z7hN7lbLRDeX4MzIPuirnzoFb0-Pr8uXbL15Xi0f1llLcRkzxhUhKq8WuTLp0bqguGZVyTBf1DXFDNMcE8MWqkJK8YIWaapUQUqucMkNpVNwM_qm89_3OkTRub23aaUgBCcHzliZqNlItW74A7pODoIvBBWIohKVYqhNQu_-QTESx2DEMQVxTEGMwdBv9o-DxQ</recordid><startdate>20190301</startdate><enddate>20190301</enddate><creator>Fujita, Yuichi</creator><creator>Matsuzaki, Yasufumi</creator><creator>Kon, Shintaro</creator><creator>Yasukawa, Yukiko</creator><creator>Koizumi, Hiroki</creator><creator>Yanagihara, Hideto</creator><creator>Saito, Hidekazu</creator><general>IOP Publishing</general><general>Japanese Journal of Applied Physics</general><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-7520-0689</orcidid></search><sort><creationdate>20190301</creationdate><title>Improvements of surface morphology and electrical transport properties of single-crystalline In2O3(111) thin films by postgrowth annealing</title><author>Fujita, Yuichi ; Matsuzaki, Yasufumi ; Kon, Shintaro ; Yasukawa, Yukiko ; Koizumi, Hiroki ; Yanagihara, Hideto ; Saito, Hidekazu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i319t-45b22b6c86bffded731d4c94158dd31413612f48bc0bb5737dd3bb7295b195f33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>Annealing</topic><topic>Carrier density</topic><topic>Crystal structure</topic><topic>Crystallinity</topic><topic>Electron beams</topic><topic>Electron mobility</topic><topic>Flat surfaces</topic><topic>Hall effect</topic><topic>Indium oxides</topic><topic>Morphology</topic><topic>Single crystals</topic><topic>Substrates</topic><topic>Thin films</topic><topic>Transport properties</topic><topic>Yttria-stabilized zirconia</topic><topic>Yttrium oxide</topic><topic>Zirconium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Fujita, Yuichi</creatorcontrib><creatorcontrib>Matsuzaki, Yasufumi</creatorcontrib><creatorcontrib>Kon, Shintaro</creatorcontrib><creatorcontrib>Yasukawa, Yukiko</creatorcontrib><creatorcontrib>Koizumi, Hiroki</creatorcontrib><creatorcontrib>Yanagihara, Hideto</creatorcontrib><creatorcontrib>Saito, Hidekazu</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Japanese Journal of Applied Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Fujita, Yuichi</au><au>Matsuzaki, Yasufumi</au><au>Kon, Shintaro</au><au>Yasukawa, Yukiko</au><au>Koizumi, Hiroki</au><au>Yanagihara, Hideto</au><au>Saito, Hidekazu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improvements of surface morphology and electrical transport properties of single-crystalline In2O3(111) thin films by postgrowth annealing</atitle><jtitle>Japanese Journal of Applied Physics</jtitle><addtitle>Jpn. J. Appl. Phys</addtitle><date>2019-03-01</date><risdate>2019</risdate><volume>58</volume><issue>3</issue><spage>030909</spage><pages>030909-</pages><issn>0021-4922</issn><eissn>1347-4065</eissn><coden>JJAPB6</coden><abstract>We have grown single-crystalline In2O3 films on yttria-stabilized zirconia (001) and (111) substrates by reactive electron beam evaporation, and investigated the effects of ex situ postgrowth annealing in oxygen atmosphere on the surface morphology and electrical transport properties. For the (111)-oriented film, we observed a flat surface in atomic scale as well as high Hall mobility up to 130 cm2 V−1 s−1 with carrier density of 2.3 × 1019 cm−3 at room temperature. The results indicate that the postgrowth annealing is effective in fabricating high-quality In2O3 film.</abstract><cop>Tokyo</cop><pub>IOP Publishing</pub><doi>10.7567/1347-4065/aafdec</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-7520-0689</orcidid></addata></record> |
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source | IOPscience journals; Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List) |
subjects | Annealing Carrier density Crystal structure Crystallinity Electron beams Electron mobility Flat surfaces Hall effect Indium oxides Morphology Single crystals Substrates Thin films Transport properties Yttria-stabilized zirconia Yttrium oxide Zirconium dioxide |
title | Improvements of surface morphology and electrical transport properties of single-crystalline In2O3(111) thin films by postgrowth annealing |
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