Depth-profiling XPS analysis of He-plasma treated amorphous InGaZnO thin films for use in top-gate coplanar thin-film transistors

A low-resistance amorphous InGaZnO (a-InGaZnO) film obtained with helium (He) plasma treatment is commonly used as the source/drain regions of top-gate planar thin-film transistors. Here we discuss some experimental results for the low-resistance a-InGaZnO films, focusing on depth profiling analysis...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-03, Vol.58 (3), p.38005
Main Authors: Takechi, Kazushige, Kuwahara, Yuya, Tanaka, Jun, Tanabe, Hiroshi
Format: Article
Language:English
Subjects:
Depth profiling
Helium
Photoelectrons
Plasma
Semiconductor devices
Thin film transistors
Transistors
X ray photoelectron spectroscopy
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A low-resistance amorphous InGaZnO (a-InGaZnO) film obtained with helium (He) plasma treatment is commonly used as the source/drain regions of top-gate planar thin-film transistors. Here we discuss some experimental results for the low-resistance a-InGaZnO films, focusing on depth profiling analysis of X-ray photoelectron spectroscopy signals. We show that the effect of He plasma treatment, which is generation of considerable oxygen vacancies, extends for the entire thickness (over 70 nm) of a-InGaZnO film. We also show that a significantly In-rich layer may be formed beneath the a-InGaZnO surface, depending on the He plasma power density.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/aafed3