Depth-profiling XPS analysis of He-plasma treated amorphous InGaZnO thin films for use in top-gate coplanar thin-film transistors

A low-resistance amorphous InGaZnO (a-InGaZnO) film obtained with helium (He) plasma treatment is commonly used as the source/drain regions of top-gate planar thin-film transistors. Here we discuss some experimental results for the low-resistance a-InGaZnO films, focusing on depth profiling analysis...

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Published in:Japanese Journal of Applied Physics 2019-03, Vol.58 (3), p.38005
Main Authors: Takechi, Kazushige, Kuwahara, Yuya, Tanaka, Jun, Tanabe, Hiroshi
Format: Article
Language:English
Subjects:
Depth profiling
Helium
Photoelectrons
Plasma
Semiconductor devices
Thin film transistors
Transistors
X ray photoelectron spectroscopy
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cited_by cdi_FETCH-LOGICAL-c407t-7d97f7f7b241a93d8e22633b901d516f64228692e74643c6c003cbf8190644023
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Tanabe, Hiroshi
description A low-resistance amorphous InGaZnO (a-InGaZnO) film obtained with helium (He) plasma treatment is commonly used as the source/drain regions of top-gate planar thin-film transistors. Here we discuss some experimental results for the low-resistance a-InGaZnO films, focusing on depth profiling analysis of X-ray photoelectron spectroscopy signals. We show that the effect of He plasma treatment, which is generation of considerable oxygen vacancies, extends for the entire thickness (over 70 nm) of a-InGaZnO film. We also show that a significantly In-rich layer may be formed beneath the a-InGaZnO surface, depending on the He plasma power density.
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subjects Depth profiling
Helium
Photoelectrons
Plasma
Semiconductor devices
Thin film transistors
Transistors
X ray photoelectron spectroscopy
title Depth-profiling XPS analysis of He-plasma treated amorphous InGaZnO thin films for use in top-gate coplanar thin-film transistors
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