Formation of Nanoporous Copper-Silicide Films

The possibility of forming nanoporous copper-silicide films with different phase compositions is experimentally demonstrated. For this purpose, the parameters of the initial a -Si/Cu structure and the conditions of its annealing are chosen so that the process of solid-phase synthesis comes to a halt...

Full description

Saved in:
Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) N.Y.), 2019-03, Vol.53 (3), p.395-399
Main Authors: Buchin, E. Yu, Naumov, V. V., Vasilyev, S. V.
Format: Article
Language:English
Subjects:
Annealing
Clusters
Copper
Fabrication
Inorganic acids
Intermetallic compounds
Magnetic Materials
Magnetism
Physics
Physics and Astronomy
Silicides
Silicon
Silicon compounds
Solid phase synthesis
Solid phases
Testing of Materials and Structures
Treatment
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The possibility of forming nanoporous copper-silicide films with different phase compositions is experimentally demonstrated. For this purpose, the parameters of the initial a -Si/Cu structure and the conditions of its annealing are chosen so that the process of solid-phase synthesis comes to a halt at the stage of formation of a branched silicide cluster. Then the films are subjected to liquid etching in a mixture of diluted inorganic acids. In this case, the metastable Cu x Si phase with a low Cu content is selectively removed, and a three-dimensional silicide cluster is released. At the same time, surface Kirkendall voids present in the films open. As a result of these two processes in combination, a nanoporous structure is formed.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619030059