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Optical extraction enhancement of an 860 nm GaAs based vertical-cavity surface emitting laser with a double textured structure
The use of a double textured structure for improving the light extraction efficiency of an 860 nm GaAs vertical-cavity surface emitting laser (VCSEL) is investigated. The textured structure was formed on both surface of a GaP top layer and the surface of a SiN film used as an anti-reflection film. T...
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Published in: | Japanese Journal of Applied Physics 2019-02, Vol.58 (2), p.22002 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The use of a double textured structure for improving the light extraction efficiency of an 860 nm GaAs vertical-cavity surface emitting laser (VCSEL) is investigated. The textured structure was formed on both surface of a GaP top layer and the surface of a SiN film used as an anti-reflection film. The measurement of the emission spectrum indicated that the light extraction efficiency of a VCSEL was increased by using it as a textured top surface as well as an anti-reflection film either without or with a textured surface. Significant increases in the light extraction efficiency were observed in the VCSEL with both a textured top structure and textured anti-reflection structure. The optical properties of VCSEL chips were used to obtain the highest output power of 127 mW with a double textured structure, which exhibits a relative increase of approximately 73% when compared to that of a conventional VSCEL (75 mW). |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.7567/1347-4065/aaf696 |