Proposal of Toggle Spin Torques Magnetic RAM for Ultrafast Computing

We propose a toggle spin torques magnetic random access memory (TST-MRAM) for ultrafast computing. The write operation of the TST-MRAM is achieved by applying two currents to the MTJ and a heavy metal layer, respectively, in a toggle-like manner. These two currents generate spin transfer torque (STT...

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Bibliographic Details
Published in:IEEE electron device letters 2019-05, Vol.40 (5), p.726-729
Main Authors: Wang, Zhaohao, Zhou, Haochang, Wang, Mengxing, Cai, Wenlong, Zhu, Daoqian, Klein, Jacques-Olivier, Zhao, Weisheng
Format: Article
Language:English
Subjects:
Computation
Durability
Endurance
Heavy metals
Magnetic fields
Magnetic random access memory
Magnetic tunneling
Magnetism
Magnetization
Metals
Random access memory
spin orbit torque
spin transfer torque
Switches
toggle spin torques
Torque
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Summary:We propose a toggle spin torques magnetic random access memory (TST-MRAM) for ultrafast computing. The write operation of the TST-MRAM is achieved by applying two currents to the MTJ and a heavy metal layer, respectively, in a toggle-like manner. These two currents generate spin transfer torque (STT) and spin-orbit torque (SOT) to switch the magnetization. Thanks to the interplay effect between STT and SOT, low-energy and ultrafast write operation can be implemented without the need for the additional magnetic field. It is important to mention that both the amplitude and duration of the current flowing through the tunnel barrier can be decreased to enhance significantly the write endurance of the MTJ. The results demonstrate that the TST-MRAM is a good candidate for the upper-level caches, where the ultrafast operation and high write endurance are indispensable.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2019.2907063