Anti-phase domain induced morphological differences of self-assembled InSb/GaAs quantum dots grown on (0 0 1) Ge substrate

• Published in: Journal of crystal growth 2019-04, Vol.512, p.136-141
• Main Authors: Zon, Thainoi, Supachok, Kiravittaya, Suwit, Tandaechanurat, Aniwat, Nuntawong, Noppadon, Sopitpan, Suwat, Yordsri, Visittapong, Thanachayanont, Chanchana, Kanjanachuchai, Songphol, Ratanathammaphan, Somchai, Panyakeow, Somsak
• Format: Article
• Language: English
• Subjects: Antiphase boundaries; Density; Ge substrate; Growth rate; Indium antimonide; InSb/GaAs; Intermetallic compounds; Molecular beam epitaxy; Morphology; Nucleation; Quantum dots; Self-assembly; Substrates
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2019.02.015

•Growth of InSb QDs on anti-phase-domain-decorated (0 0 1) GaAs surface is performed.•Effects of growth temperature, rate and local growth position are investigated.•Anti-phase domain boundary plays role in the local QD alignment and QD shape.•At low growth rate, low density and locally aligned InSb/GaAs QDs are obtained.•At high growth rate, high density InSb/GaAs QDs are obtained. The effects of growth temperature, growth rate and local growth position on the morphology of self-assembled InSb/GaAs quantum dots (QDs) on (0 0 1) Ge substrate are investigated. It is found that for low growth rates, anti-phase domain (APD) boundaries formed during the growth of GaAs on Ge can effectively act as the preferential nucleation position of InSb QDs. For high growth rates, InSb/GaAs QDs nucleate on both the APD boundary and the APD surface, leading to high density-InSb QDs. The QD morphologies on the APD boundary and the APD surface are distinctly different. The roles of growth rate and local growth position on the morphology of realized QDs are described. By varying the growth conditions, low density and locally aligned QDs as well as high density InSb QDs can be obtained.