Diffuson contribution to anomalous Hall effect in disordered Co2FeSi thin films

•Discovery of electron-diffuson scattering contribution to anomalous Hall effect (AHE).•Only in disordered ferromagnets (FMs) does the weak localization contribute to AHE.•Electron-electron interaction effects do not contribute to AHE in crystalline FMs.•A universal scaling holds between AHE and tem...

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Published in:Journal of magnetism and magnetic materials 2019-07, Vol.481, p.194-202
Main Authors: Hazra, Binoy Krishna, Kaul, S.N., Srinath, S., Raja, M. Manivel, Rawat, R., Lakhani, Archana
Format: Article
Language:English
Subjects:
Anomalous Hall effect
Conduction electrons
Crystal structure
Crystallinity
Electrical resistivity
electrical- and magneto-transport
Electron-diffuson scattering
electron-electron interaction effects
Hall effect
Heusler alloy
Heusler alloys
Inelastic scattering
Magnetism
Magnetization
Magnetoresistance
Magnetoresistivity
Magnons
Silicon substrates
Temperature dependence
Thin films
Weak localization
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Summary:•Discovery of electron-diffuson scattering contribution to anomalous Hall effect (AHE).•Only in disordered ferromagnets (FMs) does the weak localization contribute to AHE.•Electron-electron interaction effects do not contribute to AHE in crystalline FMs.•A universal scaling holds between AHE and temperature-dependent part of resistivity. An exhaustive study of the influence of disorder on anomalous Hall (AH) resistivity (ρxyAH), longitudinal resistivity (ρxx), magnetoresistance and magnetization of Co2FeSi (CFS) Heusler alloy thin films of fixed (50 nm) thickness, deposited on Si (111) substrate, reveals the following. Regardless of the degree of disorder present, the side-jump mechanism gives a dominant contribution to ρxyAH. A new and novel contribution to both ρxx and ρxyAH, characterized by the logarithmic temperature (-lnT) dependence at temperatures below the minimum (T
ISSN:0304-8853
1873-4766
DOI:10.1016/j.jmmm.2019.02.081