Modulation of electronic properties and Schottky barrier in the graphene/GaS heterostructure by electric gating

In this work, the structure, electronic properties, and the Schottky barrier of the van der Waals heterostructure (vdWH) based on graphene and gallium sulfide (GaS) have been theoretically considered using density functional theory. We found that the graphene/GaS vdWH keeps the extraordinary intrins...

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Bibliographic Details
Published in:Physica. B, Condensed matter Condensed matter, 2019-02, Vol.555, p.69-73
Main Authors: Pham, Khang D., Vu-Quang, Hieu, Nguyen, Chuong V.
Format: Article
Language:English
Subjects:
Carbon
Contact resistance
Density
Density functional theory
Electric contacts
Electric fields
Electric gating
Electric properties
Gallium
Gallium sulfide
Graphene
Heterostructures
Optoelectronic devices
Optoelectronics
Properties (attributes)
Schottky barrier
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Summary:In this work, the structure, electronic properties, and the Schottky barrier of the van der Waals heterostructure (vdWH) based on graphene and gallium sulfide (GaS) have been theoretically considered using density functional theory. We found that the graphene/GaS vdWH keeps the extraordinary intrinsic properties of both the graphene and GaS monolayer. Moreover, an n-type Schottky contact with a small Schottky barrier of 0.51 eV was formed in the ground state of the heterostructure. Especially, our results demonstrated that applying an electric gating can tune effectively the Schottky barrier and contact types. The transformations from the n-type Schottky contact to the p-type one and from the Schottky to the Ohmic contacts were observed in the vdWH under electric gating. These results propose a great potential for the van der Waals heterostructure in future nanoelectronic and optoelectronic devices. •DFT calculations of the structural and electronic properties of graphene/GaS vdWH.•Excellent intrinsic properties of graphene and GaS are preserved in the graphene/GaS vdWH.•vdWH forms an n-type Schottky contact with the Schottky barrier height of 0.52 eV.•Schottky barriers and Schottky contact types could be controlled by applying electric field.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2018.11.049