Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs

In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain. The breakdown of such devices with meandering gate-drain access region (M-HEMT) are found to...

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Published in:arXiv.org 2019-05
Main Authors: Kumar, Sandeep, Dolmanan, Surani B, Tripathy, Sudhiranjan, Rangarajan Muralidharan, Nath, Digbijoy N
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Breakdown
Electric fields
Electric potential
Figure of merit
Gallium nitrides
High electron mobility transistors
Repair & maintenance
Semiconductor devices
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Dolmanan, Surani B
Tripathy, Sudhiranjan
Rangarajan Muralidharan
Nath, Digbijoy N
description In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain. The breakdown of such devices with meandering gate-drain access region (M-HEMT) are found to be 62% more compared to that of conventional HEMT while the ON resistance suffers by 76%, leading to an overall improvement in the BFOM for by 28%. 3D-TCAD simulations show that the decrease in the peak electric field at the gate edge was responsible for increased breakdown voltage.
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subjects Aluminum gallium nitrides
Breakdown
Electric fields
Electric potential
Figure of merit
Gallium nitrides
High electron mobility transistors
Repair & maintenance
Semiconductor devices
title Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs
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