Realization of Accurate On-Wafer Measurement Using Precision Probing Technique at Millimeter-Wave Frequency

This paper demonstrates a novel measurement technique that can be utilized in on-wafer calibration and device evaluation procedures. This technique can realize a repeatable determination of the distance between probes thorough RF signal detection. The measured S-parameters are analyzed to determine...

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Bibliographic Details
Published in:IEEE transactions on instrumentation and measurement 2018-08, Vol.67 (8), p.1940-1945
Main Authors: Sakamaki, Ryo, Horibe, Masahiro
Format: Article
Language:English
Subjects:
Alignment
Automation
Calibration
Dependence
Measurement techniques
Micrometers
Microscopy
Millimeter waves
Parameters
Probes
Reproducibility
Scattering parameters
Semiconductor device measurement
Signal detection
Substrates
Transmission line measurements
Transmission lines
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Summary:This paper demonstrates a novel measurement technique that can be utilized in on-wafer calibration and device evaluation procedures. This technique can realize a repeatable determination of the distance between probes thorough RF signal detection. The measured S-parameters are analyzed to determine the origin coordinates of probes. As these procedures are automated, operator dependence in the alignment of the probe position and resolution of the microscope is eliminated. A fully automatic probe station is constructed, and an impedance standard substrate (ISS) with special alignment patterns is fabricated for realizing this technique. The origin coordinates of two probes are determined at a certain position above the alignment patterns. The obtained variation in the distance between the probes is a few micrometers, which is less than that in conventional manual probing. Measurement reproducibility is investigated by evaluating the standard deviations of the measured S-parameters of a matched transmission line on the ISS. The proposed technique exhibits lower standard deviations compared to those of conventional manual probing.
ISSN:0018-9456
1557-9662
DOI:10.1109/TIM.2018.2806058