Epitaxial Growth of Fe3O4 Layers on the C-Plane of Sapphire by Pulsed Laser Deposition

— We have studied the effect of substrate temperature and molecular oxygen pressure on the growth of thin (

Saved in:
Bibliographic Details
Published in:Inorganic materials 2019, Vol.55 (1), p.42-48
Main Authors: Malikov, I. V., Berezin, V. A., Fomin, L. A., Mikhailov, G. M.
Format: Article
Language:English
Subjects:
Aluminum oxide
Chemistry
Chemistry and Materials Science
Crystal structure
Electrical properties
Epitaxial growth
Film growth
High vacuum
Industrial Chemistry/Chemical Engineering
Inorganic Chemistry
Iron oxides
Magnetic properties
Magnetite
Materials Science
Morphology
Oxygen
Pulsed laser deposition
Pulsed lasers
Sapphire
Single crystals
Substrates
Surface roughness
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:— We have studied the effect of substrate temperature and molecular oxygen pressure on the growth of thin (
ISSN:0020-1685
1608-3172
DOI:10.1134/S0020168519010072