Loading…

A novel hot embossing Graphene transfer process for flexible electronics

In this work a new Single Layer Graphene (SLG) transfer technique exploiting a hot embossing process was carried out. Flexible electrolyte gated Graphene Field Effect Transistors (G-FET) were fabricated and tested electrically. A polymeric transparent foil suitable for optics and flexible electronic...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2019-03, Vol.209, p.16-19
Main Authors: Ballesio, A., Parmeggiani, M., Verna, A., Frascella, F., Cocuzza, M., Pirri, C.F., Marasso, S.L.
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this work a new Single Layer Graphene (SLG) transfer technique exploiting a hot embossing process was carried out. Flexible electrolyte gated Graphene Field Effect Transistors (G-FET) were fabricated and tested electrically. A polymeric transparent foil suitable for optics and flexible electronics, Cyclic Olefin Copolymer (COC) was used as flexible substrate. Raman characterization confirmed that the new Hot Embossing Graphene Transfer (HEGT) is suitable for the deposition of SLG and the fabrication of G-FETs. A Comparison with SLG common transfer method was carried out and proven for G-FETs fabrication. The HEGT devices showed typical characteristics and maintained the same performances when the substrate was bent. This demonstrated that the HEGT allows for efficient transfer of high quality SLG on large area thus providing the opportunity for the exploitation on a large scale production process for flexible substrates. [Display omitted] •Graphene can be successfully transferred on COC without polymer sacrificial layer.•G-FETs show comparable characteristics to common transfer techniques.•G-FETs are suitable for flexible electronics since they work also under bending.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2019.02.010